參數(shù)資料
型號: STD12NF06
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET
中文描述: N溝道60V的- 0.08歐姆-第12A像是iPak / DPAK封裝STripFET⑩二功率MOSFET
文件頁數(shù): 1/10頁
文件大?。?/td> 177K
代理商: STD12NF06
STD12N05
STD12N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.1
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
December 1996
TYPE
V
DSS
R
DS(on)
< 0.15
< 0.15
I
D
STD12N05
50 V
12 A
STD12N06
60 V
12 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD12N05
STD12N06
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
50
60
V
V
DGR
50
60
V
V
GS
±
20
12
V
I
D
A
I
D
8
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
48
A
45
W
Derating Factor
0.3
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相關(guān)PDF資料
PDF描述
STD130 STD130|Data Sheet
STD131 STD131|Data Sheet
STD150 STD150|Data Sheet
STD15N06-1 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-251
STD15N06L-1 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-251
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD12NF06 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK
STD12NF06_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET? II Power MOSFET
STD12NF06-1 功能描述:MOSFET N-Ch 60 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD12NF06L 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC D-PAK 制造商:STMicroelectronics 功能描述:MOSFET, N, LOGIC, D-PAK 制造商:STMicroelectronics 功能描述:MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:30W;RoHS Compliant: Yes 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 12A STripFETII DPAK
STD12NF06L 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC D-PAK