參數(shù)資料
型號(hào): STB95NF03
廠商: 意法半導(dǎo)體
元件分類: 功率晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 587K
代理商: STB95NF03
1/9
March 2003
STB95NF03
N-CHANNEL 30V - 0.0065
- 95A D2PAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0065
I
STANDARD THRESHOLD DRIVE
I
100% AVALANCHE TESTED
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
DC-DC & DC-AC CONVERTERS
I
SOLENOID AND RELAY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STB95NF03
30 V
<0.007
80 A
1
3
D
2
PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) I
SD
95A, di/dt
150A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 47.5A, V
DD
= 25V
Parameter
Value
30
30
± 20
80
80
320
150
1
3.0
720
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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