- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382556 > STB8NC70Z-1 (意法半導體) N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET PDF資料下載
參數(shù)資料
| 型號： | STB8NC70Z-1 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 532K |
| 代理商： | STB8NC70Z-1 |
3/13
STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 350 V, I
D
= 37.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 560V, I
D
= 7.5 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
30
ns
t
r
Rise Time
10
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
55
77
nC
Gate-Source Charge
14
nC
Gate-Drain Charge
21
nC
Parameter
Test Conditions
V
DD
= 560V, I
D
= 7.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
15
ns
Fall Time
12
ns
Cross-over Time
20
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
6.8
A
Source-drain Current (pulsed)
27
A
Forward On Voltage
I
SD
= 6.8 A, V
GS
= 0
I
SD
= 7.5 A, di/dt = 100A/μs,
V
DD
= 30V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
680
ns
Reverse Recovery Charge
7.1
μC
Reverse Recovery Current
21
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=± 1mA (Open Drain)
25
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 50 mA,
90
相關PDF資料 |
PDF描述 |
|---|---|
| STB9NK60ZFP | N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB9NK70ZFP | N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STBR606 | 50-60Hz RECTIFICATION BRIDGE |
| STBR608 | 50-60Hz RECTIFICATION BRIDGE |
| STBV45-AP | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB8NC70ZT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
| STB8NM60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET |
| STB8NM60D | 功能描述:MOSFET N Ch 600V 0.9Ohm 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB8NM60N | 功能描述:MOSFET N-ch 600 Volts 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB8NM60T4 | 功能描述:MOSFET N-Ch 650 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。