參數(shù)資料
型號: STB80NE03L-06-1
廠商: 意法半導(dǎo)體
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC01; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight
中文描述: N溝道30V的- 0.005ohm - 80A條采用D2PAK / I2PAK STripFET⑩功率MOSFET
文件頁數(shù): 2/9頁
文件大?。?/td> 295K
代理商: STB80NE03L-06-1
STB80NE03L-06 / STB80NE03L-06-1
2/9
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 15 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1
°C/W
°C/W
62.5
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
80
Unit
A
600
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
30
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ± 20 V
± 100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10 V, I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
1.7
2.5
V
Static Drain-source On
Resistance
0.005
0.006
0.008
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 40 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
30
Typ.
50
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
6500
pF
Output Capacitance
1500
pF
Reverse Transfer
Capacitance
500
pF
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