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參數(shù)資料
| 型號： | STB60NE03L-12 |
| 廠商： | 意法半導體 |
| 英文描述： | PC 26C 26#20 SKT RECP |
| 中文描述： | ? -通道30V的- 0.009歐姆-第60A條- D2PAK封裝，單特征尺寸功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 99K |
| 代理商： | STB60NE03L-12 |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.25
62.5
0.5
300
o
C/W
oC/W
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 20 V)
60
A
E
AS
600
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
o
C
V
GS
=
±
15 V
T
c
= 125
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
1
1.7
2.5
V
R
DS(on)
V
GS
= 10V
V
GS
= 5V
I
D
= 30 A
I
D
= 30 A
0.007
0.01
0.015
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
60
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=30 A
25
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
4000
1000
320
5400
1350
450
pF
pF
pF
STB60NE03L-10
2/8
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| STB60NE03L-12T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
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| STB60NE06L-16 | 制造商:STMicroelectronics 功能描述: |
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