參數(shù)資料
型號(hào): STB60NE03L-10
廠商: 意法半導(dǎo)體
英文描述: PC 8C 8#20 SKT RECP
中文描述: ? -通道增強(qiáng)型“特征尺寸單”功率MOSFET
文件頁數(shù): 3/8頁
文件大?。?/td> 99K
代理商: STB60NE03L-10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
R
G
=4.7
(see test circuit, figure 3)
V
DD
= 24 V
I
D
= 30 A
V
GS
= 5 V
35
240
50
320
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 60 A
V
GS
= 5 V
62
20
31
85
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V
R
G
=4.7
(see test circuit, figure 5)
I
D
= 60 A
V
GS
= 5 V
60
80
150
80
110
200
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
60
240
A
A
V
SD
(
)
I
SD
= 60 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A
V
DD
= 24 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
C
70
0.13
4
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
Safe OperatingArea
Thermal Impedance
STB60NE03L-10
3/8
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