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參數(shù)資料
| 型號： | STB55NF06LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 55A條（丁）|對263AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 119K |
| 代理商： | STB55NF06LT4 |
1/10
August 2002
.
STP55NF06
STB55NF06-1 STP55NF06FP
N-CHANNEL 60V - 0.015
- 50A TO-220/TO-220FP/I
2
PAK
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.015
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
”
strip-based
process.
The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
resulting
transistor
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ANVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TYPE
V
DSS
R
DS(on)
I
D
STP55NF06
STB55NF06-1
STB55NF06FP
60 V
60 V
60 V
<0.018
<0.018
<0.018
50 A
50 A
26 A
1
2
3
TO-220
I
2
PAK
TO-262
123
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limitedby safe operating area.
(1) I
SD
≤
50A, di/dt
≤
400A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 25A, V
DD
= 30V
Parameter
Value
Unit
STP55NF06
STB55NF06
STP55NF06FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
60
60
±
20
V
V
V
A
A
A
W
50
35
200
110
0.73
26
18
104
30
0.2
W/
°
C
V/ns
mJ
dv/dt
(1)
E
AS(2)
T
stg
T
j
7
350
-55 to 175
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB55NF06T4 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-263AB |
| STB55NF03LT4 | 30V N-Channel PowerTrench MOSFET |
| STB55NF06 | N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET |
| STB55NF06-1 | N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET |
| STB5NA50-1 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-262VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB55NF06T4 | 功能描述:MOSFET N-Ch 60 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5600 | 功能描述:射頻無線雜項 GPS Front-End RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| STB5600TR | 功能描述:射頻無線雜項 GPS Front-End RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| STB5610 | 功能描述:射頻無線雜項 GPS Front-End RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| STB5610TR | 功能描述:射頻無線雜項 GPS RF Front End RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
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