參數(shù)資料
型號： STB4NC80Z
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
中文描述： N溝道800V的- 2.4ohm - 4A條TO-220/FP/D2PAK/I2PAK齊保護的PowerMESH⑩三MOSFET的
文件頁數(shù)： 2/13頁
文件大?。?/td> 526K
代理商： STB4NC80Z
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
2/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
TO-220 / D
2
PAK /
I
2
PAK
1.25
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.57
°C/W
°C/W
30
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
4
Unit
A
225
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
I
D
= 1 mA, V
GS
= 0
0.9
V/°C
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±20V
±10
μA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 2 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
2.4
2.8
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
Max.
Unit
Forward Transconductance
4
S
C
iss
C
oss
Input Capacitance
1200
pF
Output Capacitance
90
pF
C
rss
Reverse Transfer
Capacitance
11
pF
相關(guān)PDF資料
PDF描述
STB4NC80Z-1 N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STB4NK60ZT4 N-CHANNEL 600V - 1.76 OHM - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP4NK60ZFP N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB4NK60Z-1 N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STD4NK60Z-1 N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB4NC80Z-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STB4NC80ZT4 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET
STB4NK60Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB4NK60Z_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 1.76 ヘ - 4 A SuperMESH⑩ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
STB4NK60Z-1 功能描述:MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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