參數(shù)資料
型號(hào)： STB4NC80Z-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
中文描述： N溝道800V的- 2.4ohm - 4A條TO-220/FP/D2PAK/I2PAK齊保護(hù)的PowerMESH⑩三MOSFET的
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 526K
代理商： STB4NC80Z-1
3/13
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 400 V, I
D
= 2 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 640V, I
D
= 4A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
27
ns
t
r
Rise Time
10
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
27
36.5
nC
Gate-Source Charge
7
nC
Gate-Drain Charge
10
nC
Parameter
Test Conditions
V
DD
= 640V, I
D
= 4 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
11
ns
Fall Time
10
ns
Cross-over Time
24
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
4
A
Source-drain Current (pulsed)
16
A
Forward On Voltage
I
SD
= 4 A, V
GS
= 0
I
SD
= 4 A, di/dt = 100A/μs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
560
ns
Reverse Recovery Charge
3.4
μC
Reverse Recovery Current
13
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=± 1mA (Open Drain)
25
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 50 mA,
90
相關(guān)PDF資料
PDF描述
STB4NK60ZT4 N-CHANNEL 600V - 1.76 OHM - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP4NK60ZFP N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB4NK60Z-1 N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STD4NK60Z-1 N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STP4NK60Z N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB4NC80ZT4 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET
STB4NK60Z 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB4NK60Z_08 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 600 V - 1.76 ヘ - 4 A SuperMESH⑩ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
STB4NK60Z-1 功能描述:MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB4NK60ZT4 功能描述:MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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