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參數(shù)資料
| 型號： | STB4NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | INTEGRATED EC000 MPU |
| 中文描述： | N溝道600V的- 1.8ohm - 4.2A D2PAK封裝MOSFET的第二PowerMesh⑩ |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 429K |
| 代理商： | STB4NC60 |
STB4NC60
2/9
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.25
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
4.2
Unit
A
250
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 1.5 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
1.8
2.2
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
3.7
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
475
pF
Output Capacitance
72
pF
Reverse Transfer
Capacitance
10
pF
相關PDF資料 |
PDF描述 |
|---|---|
| STB4NC60-1 | INTEGRATED EC000 MPU |
| STB4NC60A-1 | 32BIT MCU,GPT,SIM,QSM |
| STB4NC80ZT4 | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET |
| STB4NC80Z | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB4NC80Z-1 | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB4NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60A-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4.2A I(D) | TO-263AB |
| STB4NC80Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB4NC80Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
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