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參數(shù)資料
| 型號： | STB4NC60-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | INTEGRATED EC000 MPU |
| 中文描述： | N溝道600V的- 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh第二MOSFET的⑩ |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 429K |
| 代理商： | STB4NC60-1 |
3/9
STB4NC60
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 300V, I
D
= 2A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 480V, I
D
= 4A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
14
ns
t
r
Rise Time
14
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
16.5
23.1
nC
Gate-Source Charge
2.5
nC
Gate-Drain Charge
9
nC
Parameter
Test Conditions
V
DD
= 480V, I
D
= 4.2A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
15
ns
Fall Time
19
ns
Cross-over Time
24
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
4.2
A
Source-drain Current (pulsed)
16.8
A
Forward On Voltage
I
SD
= 4.2A, V
GS
= 0
I
SD
= 4 A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
600
ns
Reverse Recovery Charge
2.7
μC
Reverse Recovery Current
9
A
Safe Operating Area
Thermal Impedance
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PDF描述 |
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| STB4NC60A-1 | 32BIT MCU,GPT,SIM,QSM |
| STB4NC80ZT4 | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET |
| STB4NC80Z | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB4NC80Z-1 | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB4NK60ZT4 | N-CHANNEL 600V - 1.76 OHM - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB4NC60A-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4.2A I(D) | TO-263AB |
| STB4NC80Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB4NC80Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB4NC80ZT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET |
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