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參數(shù)資料
| 型號： | STB4NC50 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩II MOSFET |
| 中文描述： | N溝道500V - 2.2ohm - 4A條采用D2PAK PowerMesh第二MOSFET的⑩ |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 244K |
| 代理商： | STB4NC50 |
STB4NC50
2/8
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
T
l
AVALANCHE CHARACTERISTICS
Symbol
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
DYNAMIC
Symbol
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
1.56
62.5
0.5
°C/W
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
Unit
I
AR
10
A
E
AS
110
mJ
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
I
D
= 250 μA, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
1
μA
50
μA
I
GSS
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 1.5 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
2.2
2.7
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
4
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2A
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
3
S
C
iss
C
oss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
315
pF
Output Capacitance
52
pF
C
rss
Reverse Transfer
Capacitance
7.7
pF
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| STB4NC80ZT4 | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB4NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET |
| STB4NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60A-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4.2A I(D) | TO-263AB |
| STB4NC80Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
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