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參數(shù)資料
| 型號： | STB4NB80FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET |
| 中文描述： | ? -頻道800V的- 3ohm -第4A - TO-220/TO-220FP PowerMESHO MOSFET的 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | STB4NB80FP |
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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STB4NB80
6/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB4NB80 | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STB4NC50 | N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩II MOSFET |
| STB4NC60 | INTEGRATED EC000 MPU |
| STB4NC60-1 | INTEGRATED EC000 MPU |
| STB4NC60A-1 | 32BIT MCU,GPT,SIM,QSM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB4NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB4NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩II MOSFET |
| STB4NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET |
| STB4NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60A-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
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