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參數(shù)資料
| 型號： | STB45NF06 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道60V的- 0.022ohm - 38A條采用D2PAK STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | STB45NF06 |
1/9
October 2001
STB45NF06L
N-CHANNEL 60V - 0.022
- 38A D
2
PAK
STripFET
II POWER MOSFET
(1) I
SD
≤
38A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.022
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics andless critical alignment stepstherefore a re-
markable manufacturing reproducibility.
“Single
Feature
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB45NF06L
60V
<0.028
38A
Parameter
Value
Unit
60
V
V
DGR
60
V
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Gate- source Voltage
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
±
16
V
38
A
26
A
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
152
A
80
W
0.53
W/
°
C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
7
T
stg
T
j
Storage Temperature
–55 to 175
°
C
Max. Operating Junction Temperature
D
2
PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
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PDF描述 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB45NF06_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET |
| STB45NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET⑩ II POWER MOSFET |
| STB45NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB45NF06T4 | 功能描述:MOSFET N-Ch, 60V-0.022ohms 38A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB45NF3LL | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STripFET II⑩ POWER MOSFET |
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