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參數資料
| 型號： | STB15NK50ZT4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247齊納保護SuperMESH⑩功率MOSFET |
| 文件頁數： | 2/14頁 |
| 文件大小： | 672K |
| 代理商： | STB15NK50ZT4 |
STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
14A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP15NK50Z
STB15NK50Z
STB15NK50Z-1
STP15NK50ZFP
STW15NK50Z
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
14
14 (*)
14
A
8.8
8.8 (*)
8.8
A
Drain Current (pulsed)
56
56 (*)
56
A
Total Dissipation at T
C
= 25°C
Derating Factor
160
40
160
W
1.28
0.32
1.28
W/°C
I
GS
Gate-source Current (DC)
± 20
mA
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
-
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I
2
PAK
D
2
PAK
TO-220FP
TO-247
Rthj-case
Rthj-pcb
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max (#)
Thermal Resistance Junction-ambient Max
0.78
3.1
0.78
°C/W
°C/W
°C/W
°C
60
62.5
50
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
14
Unit
A
300
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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