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參數(shù)資料
| 型號(hào)： | STB13007DT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High voltage fast-switching NPN power transistor |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 164K |
| 代理商： | STB13007DT4 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.9
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V T
J
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
EB
= 7 V
1
mA
I
C
= 100 mA L = 25 mH
600
V
I
C
= 7 A I
B
= 1.75 A
3
V
I
C
= 7 A I
B
= 1.75 A
1.1
V
I
C
= 1 A V
CE
= 5 V
I
C
= 7 A V
CE
= 1 V
I
C
= 7 A V
CE
= 5 V
I
C
= 6 A f
h
= 64 KHz
I
B(on)
= 1 A V
BE(off)
= -2.5 V
L
BB(off)
= 1.3
μ
H (see figure 1)
6.5
25
5.5
9.5
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
2.3
0.16
3
0.35
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
ST2310FX
2/6
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