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參數資料
| 型號： | STB12NK80ZT4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET |
| 中文描述： | N溝道800V的- 0.65歐姆- 10.5A至220 / D2PAK封裝/至247齊納保護SuperMESH功率MOSFET |
| 文件頁數： | 4/15頁 |
| 文件大?。?/td> | 342K |
| 代理商： | STB12NK80ZT4 |
2 Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
4/15
Table 7.
Source drain diode
Table 8.
Gate-source zener diode
(1) I
SD
≤
10.5 A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300μs, duty cycle 1.5%
(5) C
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0
to 80%V
DSS
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s ESD capability, but
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device
’
s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Note
2
Source-drain Current
Source-drain Current (pulsed)
10.5
42
A
A
V
SD
Note
4
Forward on Voltage
I
SD
=10.5 A, V
GS
=0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=10.5A, di/dt = 100A/μs,
V
DD
=100 V, Tj=150
°
C
635
5.9
18.5
ns
μC
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Note
6
Gate-Source
Breakdown Voltage
Igs=±1mA
(Open Drain)
30
V
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