參數(shù)資料
型號： STB11NK50Z
廠商： 意法半導體
英文描述： N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET
中文描述： N溝道500V - 0.48ohm - 10A條TO-220/TO-220FP/D2PAK齊保護的SuperMESH⑩功率MOSFET
文件頁數(shù)： 2/12頁
文件大小： 585K
代理商： STB11NK50Z
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
2/12
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
10A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
TO-220 / D
2
PAK
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
10
10(*)
A
6.3
6.3(*)
A
Drain Current (pulsed)
40
40(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
125
30
W
1
0.24
W/°C
V
ESD(G-S)
dv/dt (1)
Viso
T
j
T
stg
4000
V
4.5
V/ns
V
--
2500
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220 / D
2
PAK
1
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.2
°C/W
°C/W
°C
62.5
300
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
10
Unit
A
190
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
STB11NK50Z_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET
STB11NK50ZT4 功能描述:MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM60 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 11A D2PAK
STB11NM60-1 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM60A-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET
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