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參數(shù)資料
| 型號(hào)： | STB11NK40Z |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 400V - 0.49ohm - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道400V - 0.49ohm - 9A條TO-220/TO-220FP/D2PAK齊保護(hù)的SuperMESH⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 579K |
| 代理商： | STB11NK40Z |
3/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
400
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20 V
±10
μA
3
3.75
4.5
V
V
GS
= 10 V, I
D
= 4.5 A
0.49
0.55
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 4.5 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5.8
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
930
140
30
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0 V, V
DS
= 0 V to 400 V
78
pF
Parameter
Test Conditions
V
DD
= 200 V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 320 V, I
D
=9 A,
V
GS
= 10 V
Min.
Typ.
20
20
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
32
6
18.5
45
nC
nC
nC
Parameter
Test Conditions
V
DD
=200 V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 320 V, I
D
= 9 A,
R
G
= 4.7
,
V
GS
= 10 V
(Inductive Load see, Figure 5)
Min.
Typ.
40
18
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
15
17
30
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
9
36
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 9 A, V
GS
= 0
I
SD
= 9 A, di/dt = 100 A/μs
V
DD
=45 V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
225
1.6
14
ns
μC
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB11NK40Z_07 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET |
| STB11NK40Z_09 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET |
| STB11NK40ZT4 | 功能描述:MOSFET N-Ch 400 Volt 9 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB11NK50Z | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB11NK50Z_08 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET |
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