參數(shù)資料
型號(hào)： STAR250
廠商： Cypress Semiconductor Corp.
英文描述： 250K Pixel Radiation Hard CMOS Image Sensor
中文描述： 25萬(wàn)像素輻射硬CMOS圖像傳感器
文件頁(yè)數(shù)： 21/24頁(yè)
文件大?。?/td> 441K
代理商： STAR250
CYIS1SM0250-AA
Document Number: 38-05713 Rev. *B
Page 6 of 24
Electrical Specifications
Absolute Maximum Ratings
Radiation Tolerance
Figure 4. shows the increase in dark current under total dose
irradiation. This curve is measured when the radiation is at
high dose rate. Annealing results in a significant dark current
decrease.
Table 3. Absolute Maximum Ratings STAR250
Characteristics
Limits
Units
Remarks
Min
Max
Any Supply Voltage
-0.5
+7
V
Voltage on any Input Terminal
-0.5
Vdd + 0.5
V
Operating Temperature
0
+60
°C
Storage Temperature
-10
+60
°C
Sensor soldering Temperature
NA
125
°C
Hand soldering only. The
sensor’s temperature
during soldering should not
exceed this limit.
Table 4. Absolute Maximum Ratings STAR250BK7
Characteristics
Limits
Units
Remarks
Min
Max
Any Supply Voltage
-0.5
+7
V
Voltage on any Input Terminal
-0.5
Vdd + 0.5
V
Operating Temperature
-40
+85
°C
Storage Temperature
-40
+85
°C
-40
+120
°C
Maximum 1 hour
Sensor soldering Temperature
NA
125
°C
Hand soldering only. The
sensor’s temperature
during soldering should not
exceed this limit.
Table 5. Radiation Tolerance
Parameter
Criterion
Qualification level
Gamma Total Dose Radiation
tolerance
Increase in average dark current
< 1 nA/cm2 after 3 MRad
See graph
Image operation with dark signal
< 1V/s
10 Mrad demonstrated (Co60)
Single (test) pixel operation with
dark signal < 1V/s
24 Mrad demonstrated (Co60)
Proton Radiation Tolerance
1% of pixels has an increase in
dark current > 1 nA/cm2 after
3*10^10 protons at 11.7 MeV
see graph
SEL Threshold
> 80 MeV cm3 mg-1
To be confirmed
[+] Feedback
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