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參數(shù)資料
| 型號： | STAR1000 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1M Pixel Radiation Hard CMOS Image Sensor |
| 中文描述： | 輻射硬盤100萬像素CMOS圖像傳感器 |
| 文件頁數(shù)： | 12/21頁 |
| 文件大小： | 611K |
| 代理商： | STAR1000 |
STAR1000
Document Number: 38-05714 Rev. *B
Page 2 of 21
Image Sensor Specifications
General Specifications
Electro-optical Specifications
Table 1. General Specification of the STAR1000 Sensor
Parameter
Specification
Comment
Detector technology
CMOS active pixel sensor
Pixel structure
3-transistor active pixel
Radiation-tolerant pixel design.
Photodiode
High fill factor photodiode
Using N-well technique.
Sensitive area format
1024 x 1024 pixels
Pixel size
15 x15
m2
Pixel output rate
12 MHz
Speed can be exchanged for power consumption.
Windowing
X- and Y- addressing random programmable
Electronic shutter
Electronic rolling shutter.
Range: 1:1024
Integration time is variable in time steps equal to the
row readout time.
Total dose radiation
tolerance
> 250 Krad (Si)
Pixel test structures with a similar design have
shown total dose tolerance up to several Mrad.
Note: Dark current and DSNU are dependent of
radiation dose.
Proton radiation tolerance
2,4.1011 proton/cm2
At 60 MeV
SEU tolerance
> 127,8 MeV cm3 mg-1
Table 2. Electro-optical Specifications of the STAR1000 Sensor
Parameter
Value
Comment
Typical Value
Unit
Spectral range
400 - 1000
nm
Quantum efficiency x fill
factor
20%
Average over the visual range. See spectral
response curve.
Full well capacity
135.000
e-
Saturation capacity to
meet non-linearity within
+ 5%
99.000
e-
Output signal swing
1.1
V
Conversion gain
11.4
V/e-
kTC noise
47
e-
Dynamic range
69
dB
Fixed pattern noise
Local: 1
σ < 0.30%
Global: 1
σ <0.56%
of full well
Photo response
non-uniformity at Sat/2
(RMS)
Local: 1
σ < 0.67%
Global:
σ <3.93%
of full well
[+] Feedback
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