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參數資料
| 型號： | STA221A |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | 1A 4-Circuits Triac Array(1A,四路可控硅陣列) |
| 中文描述： | 400 V, 1 A, TRIAC |
| 封裝： | SIP-10 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 32K |
| 代理商： | STA221A |
I
Absolute Maximum Ratings
Parameter
I
Electrical Characteristics
Symbol
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
Ratings
400
1.0
10
6
0.5
1.0
0.1
–40 to
+
125
Unit
V
A
A
V
A
W
W
°
C
°
C
Conditions
Conduction angle 360
°
, Tc=97
°
C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125
°
C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz, duty 10%
–40
°
C to +125
°
C
–40 to
+
125
V
T
2
+
, G
+
T
2
+
, G
–
T
2
T
2
T
2
+
, G
+
T
2
+
, G
–
T
2
T
2
–
, G
–
–
, G
+
–
, G
–
–
, G
+
V
mA
V
°
C/W
Parameter
Symbol
Ratings
typ
0.1
min
max
1.0
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.7
0.8
2.0
2.0
1.8
2.3
13.0
1.7
1.2
3.0
3.0
3.0
80
20
0.1
1.6
3.5
1.2
0.1
V
D
=
V
DRM
, R
GK
=
∞
, Tj
=
125
°
C
V
D
=
V
DRM
, R
GK
=
∞
, Tj
=
25
°
C
I
TM
=
1.6A, Tc
=
25
°
C
V
D
=
6V, R
L
=
10
, T
C
=
25
°
C
V
D
=
6V, R
L
=
10
, T
C
=
25
°
C
junction to operating environment, 1 element operation
Junction to Lead, 1 element operation
V
D
=
1/2
×
V
DRM
, Tj
=
125
°
C
Weight: Approx. 2.6g
64
3
2
1
10
4
8
5
9
TR
1
TR
2
TR
3
6
TR
4
7
(2.54)
1
T
3
T
2
G
4
G
5
T
6
G
7
T
2
8
G
9
T
2
10
T
9
±
0
2
±
0
1
±
0
4
±
0
1
±
0
0
±
0
1
1
2
2
9
2.54=22.86
±
0.25
1.0
±
0.25
0.5
±
0.15
25.25
±
0.2
C1.5
±
0.5
4.0
±
0.2
STA221A
1A 4 circuits Triac Array
I
Features
G
1A 4 Triacs combined one package
G
Repetitive peak off-state voltage: V
DRM
=400V
G
RMS on-state current: I
T(RMS)
=1A
G
Gate trigger current: I
GT
=3mA max (MODE , , )
External Dimensions
(Unit: mm)
a. Part Number
b. Lot Number
a
b
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak forward gate voltage
Peak forward gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
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