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參數(shù)資料
| 型號(hào)： | ST93003 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
| 中文描述： | 高壓快速開(kāi)關(guān)PNP功率晶體管 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 254K |
| 代理商： | ST93003 |
ST93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
s
MEDIUM VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial
Planar
technology
for
high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The ST93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the ST83003, its
complementary NPN transistor.
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
-500
V
VCEO
Collector-Emitter Voltage (IB = 0)
-400
V
VEBO
Emitter-Base Voltage
(IC = 0,
IB = -0.75 A,
tp < 10
s, Tj < 150oC)
V(BR)EBO
V
IC
Collector Current
-1.5
A
ICM
Collector Peak Current (tp < 5 ms)
-3
A
IB
Base Current
-0.75
A
IBM
Base Peak Current (tp < 5 ms)
-1.5
A
Ptot
Total Dissipation at Tc = 25
o C40
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
3
2
1
SOT-32
1/7
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