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參數(shù)資料
| 型號： | ST755 |
| 廠商： | 意法半導體 |
| 英文描述： | MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:9.7A; Current, Idm pulse:-50A; Power, Pd:1.5W; Resistance, Rds on:0.0105R; SMD:1; Charge, gate p |
| 中文描述： | 可調(diào)式逆變負輸出電流模式PWM調(diào)節(jié)器 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 80K |
| 代理商： | ST755 |
APPLICATION CIRCUIT
To achieve the best performances from switching
power supply topology, particular care to layout
drawing is needed, in order to minimize EMI and
obtain low noise, jitter free operation moreover, it
ensures the full device functionality. Layout
design proposed on demoboard (see picture 2)
helps to lowerthe developingtime.
Wire lengths must be minimized, filter and
by-pass capacitors C
1
, C
2
and C
3
must be low
ESR type, placed as close possible to the
integrated circuit. The 10
μ
H inductor must be
chosen built on a core, taking care that saturation
current should be higher than the peak LX switch
current. See the PEAK INDUCTOR CURRENT
vs. LOAD CURRENT graph ( figure 6)
Figure1: TYPICALAPPLICATION CIRCUIT
Figure2: PrintedDemoboard
Symbol
Pin
V
CC
1
V
out
SHDN
2
3
GND
4
ComponentValues
Capacitor
C1
C2
C3
C4
C5
C6
Value
47
100
82
1
10
47
Unit
μ
F
μ
F
pF
μ
F
μ
F
pF
Resistor
R1
R2
R3
R4
R5
Value
130
300
10
40.7
10
Unit
K
K
K
K
K
(*) R1 and R2 can be omitted for Iout<200mA.
(**) C6: Very low noise but poor transient andload response speed.
(***) C3 (alternative to C6): faster transient and load response.
ST755
4/9
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