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參數(shù)資料
| 型號： | ST733C08LFL0 |
| 元件分類： | 保險絲支架，夾子&硬件 |
| 英文描述： | Fuse Holder; Leaded Process Compatible:Yes; Mounting Type:Panel Mount RoHS Compliant: Yes |
| 中文描述： | 800V的1900A逆變晶閘管采用TO - 200AC（乙，北辰）封裝 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 157K |
| 代理商： | ST733C08LFL0 |
ST733C..L Series
3
www.irf.com
Bulletin I25188 rev. A 04/00
V
TM
V
T(TO)1
Low level value of threshold
voltage
Max. peak on-state voltage
1.63
I
TM
= 1700A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)2
High level value of threshold
voltage
r
t
1
slope resistance
Low level value of forward
r
t
2
High level value of forward
slope resistance
Maximum holding current
I
H
I
L
600
T
J
= 25
°
C, I
T
> 30A
T
J
= 25
°
C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Typical latching current
1000
Parameter
ST733C..L
Units
Conditions
On-state Conduction
1.09
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.20
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
0.32
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.29
(I >
π
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J
= T
J
max, V
DRM
= rated V
DRM
, I
TM
= 2 x di/dt
Gate pulse: 20V 20
,
10μs 0.5μs rise time
T
J
= 25
°
C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1μs
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 550A, commutating di/dt
= -40A/μs
V
R
= 50V, t
p
= 500μs, dv/dt: see table in device code
Switching
Parameter
ST733C..L
Units
Conditions
1000
A/μs
t
d
Typical delay time
1.5
Min
10
Max
20
dv/dt
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
T
= T
max. linear to 80% V
DRM
, higher value
available on request
I
RRM
I
DRM
Parameter
ST733C..L
Units
Conditions
Blocking
500
V/
μ
s
75
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
I
GM
Maximum peak gate power
60
Maximum average gate power
10
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
I
GD
V
GD
20
mA
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST733C..L
Units
Conditions
W
T
J
= T
J
max., f = 50Hz, d% = 50
20
5
V
T
J
= T
J
max, t
p
≤
5ms
200
mA
3
V
T
J
= 25
°
C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
μs
t
q
Max. turn-off time
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST733C08LFM0 | Automotive Fuse; Current Rating:3A; Voltage Rating:32V; Fuse Type:Fast Acting; Body Material:Plastic; Fuse Terminals:Blade; Length:15.41mm; Series:297; Voltage Rating:32V; Fuse Size/Group:15.41 x 10.92 x 3.81mm RoHS Compliant: Yes |
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| ST75C185C | ACS SHOCK SAFE FUSEHLDR W/BLK RFI RoHS Compliant: Yes |
| ST75C285BD | FUSE HOLDER, PC MOUNT, FOR 3AG FUSES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST733C08LFM0 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:800V 1900A Inverter Thyristor in a TO-200AC (B-Puk) package |
| ST733C08LFM0L | 功能描述:SCR模塊 940 Amp 800 Volt 1900 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| ST733C08LFM1 | 制造商:Vishay Semiconductors 功能描述:THYRISTOR 1900A 800V TO-200AC |
| ST733C08LFM1PBF | 制造商:International Rectifier 功能描述:THYRISTOR 1900A 800V TO-200AC |
| ST7-34 | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:POWER TRANSFORMER |
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