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參數(shù)資料
| 型號(hào)： | ST5771 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | PNP Switching Transistor |
| 中文描述： | PNP開關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 26K |
| 代理商： | ST5771 |
S
PNP Switching Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cutoff Current
I
CES
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 3.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
I
C
= 100
μ
A
V
CB
= 8.0 V, I
E
= 0
V
CE
= 8.0 V, I
E
= 0
V
CE
= 8.0 V, I
E
= 0, T
A
= 125
0
C
V
EB
= 4.5 V, I
C
= 0
15
15
4.5
15
V
V
V
V
nA
nA
μ
A
μ
A
10
10
5.0
1.0
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS*
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance
C
eb
Emitter-Base Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
3.0
3.5
pF
pF
7.0
SWITCHING CHARACTERISTICS
Storage Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
t
s
V
CC
= 3.0 V
I
C
= I
B1
= I
B2
= 1.0 mA
V
CC
= 1.5 V, I
C
= 10 mA,
I
B1
= 1.0 mA
20
ns
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
15
10
15
20
20
10
ns
ns
ns
ns
ns
ns
V
CC
= 1.5 V, I
C
= 10 mA
I
B1
= I
B2
= 1.0 mA
I
C
= 10 mA, V
CE
= 0.3 V
I
C
= 10 mA, V
CE
= 0.3 V,
T
A
= - 55
°
C
I
C
= 1.0 mA, V
CE
= 0.5 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
30
15
30
20
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.15
0.18
0.6
0.8
0.95
1.5
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.8
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