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參數(shù)資料
| 型號： | ST380CH06C1L |
| 元件分類： | 晶閘管 |
| 英文描述： | 2220 A, 600 V, SCR, TO-200AB |
| 封裝： | EPUK-2 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | ST380CH06C1L |
ST380CH..C Series
3
Bulletin I25169 rev. C 04/00
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/
sT
J = TJ max. linear to 80% rated V DRM
Parameter
ST380CH..C
Units Conditions
100
mA
T
J = TJ max, rated VDRM /V RRM applied
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p ≤
5ms
P
G(AV)
Maximum average gate power
2.0
T
J = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J = - 40°C
mA
T
J
= 25°C
T
J
= 150°C
T
J
= - 40°C
VT
J
= 25°C
T
J = 150°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST380CH..C
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
40
-
2.5
-
1.8
3.0
1.0
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM anode-to-cathode applied
T
J = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
VT
J = TJ max, t
p ≤
5ms
T
J
Max. operating temperature range
-40 to 150
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs Max. thermal resistance,
0.09
DC operation single side cooled
junction to heatsink
0.04
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.02
DC operation single side cooled
case to heatsink
0.01
DC operation double side cooled
F
Mounting force, ± 10%
9800
N
(1000)
(Kg)
wt
Approximate weight
83
g
Parameter
ST380CH..C
Units
Conditions
K/W
Thermal and Mechanical Specification
°C
Case style
TO - 200AB (E-PUK)
See Outline Table
K/W
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