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參數(shù)資料
| 型號(hào)： | ST380CH04C2 |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS |
| 中文描述： | 相位控制晶閘管 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | ST380CH04C2 |
ST380CH..C Series
3
Bulletin I25169 rev. C 04/00
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
I
DRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/
μ
s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST380CH..C
Units Conditions
100
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
Maximum average gate power
I
GM
+V
GM
Maximum peak positive
gate voltage
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
2.0
Max. peak positive gate current
3.0
A
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 150
°
C
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 150
°
C
mA
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST380CH..C
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
40
-
2.5
-
1.8
3.0
1.0
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
≤
5ms
T
J
T
stg
R
thJ-hs
Max. thermal resistance,
junction to heatsink
Max. operating temperature range
-40 to 150
Max. storage temperature range
-40 to 150
0.09
DC operation single side cooled
0.04
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
case to heatsink
0.02
DC operation single side cooled
0.01
DC operation double side cooled
F
Mounting force, ± 10%
9800
N
(1000)
(Kg)
wt
Approximate weight
83
g
Parameter
ST380CH..C
Units
Conditions
K/W
Thermal and Mechanical Specification
°
C
Case style
TO - 200AB (E-PUK)
See Outline Table
K/W
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