參數(shù)資料
型號： ST3230C16R0L
元件分類： 晶閘管
英文描述： 5970 A, 1600 V, SCR
封裝： RPUK-2
文件頁數(shù)： 2/6頁
文件大?。?/td> 79K
代理商： ST3230C16R0L
ST3230C..R Series
2
Bulletin I25200 rev. B 04/00
www.irf.com
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
C
= 125°C
VV
mA
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
2785 (1720)
A
@ Case temperature
80
°C
I
T(AV)
Max. average on-state current
3360 (1360)
A
@ Heatsink temperature
55 (85)
°C
I
T(RMS) Max. RMS on-state current
5970
A
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
No voltage
non-repetitive surge current
reapplied
50% V
RRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage
Initial T
C
= 125°C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage
0.92
V
T
J = TJ max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage
1.3
V
I
pk
= 2900A, T
C = 25°C
I
L
Typical latching current
300
mA
T
J
= 25°C, V
D
= 5V
Parameter
ST3230C..R
Units
Conditions
On-state Conduction
A
KA
2s
0.09
T
J
= T
J
max.
m
180° conduction, half sine wave
double side (single side [anode side]) cooled
Parameter
ST3230C..R
Units Conditions
di/dt
Max. repetitive 50Hz (no repetitive)
From 67% V
DRM
to 1000A gate drive 10V, 5
, t
r =
0.5s
rate of rise of turned-on current
to 1A, T
J
= T
J
max.
Gate drive 30V, 15
, V
d
= 67% V
DRM
, T
J
= 25°C
Rise time 0.5s
I
T
= 1000A, t
p
= 1ms, T
J
= T
J
max, V
RM
= 50V,
dI
RR
/dt = 2A/s, V
DR
= 67% V
DRM
, dv
DR
/dt = 8V/s linear
150 (300)
A/s
s
t
q
Typical turn-off time
500
t
d
Maximum delay time
4.5
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
61200
64000
49000
51300
18730
17000
12000
10920
ST3230C..R
250
Switching
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