參數(shù)資料
型號： ST25EB6TR
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 16 Kbit Serial I2C EEPROM with Extended Addressing
中文描述： 16千位串行I2C EEPROM，帶有擴(kuò)展尋址
文件頁數(shù)： 1/16頁
文件大?。?/td> 118K
代理商： ST25EB6TR
ST24E16
ST25E16
16 Kbit Serial I
2
C EEPROM with Extended Addressing
February 1999
1/16
AI01102B
3
E0-E2
SDA
VCC
ST24E16
ST25E16
WC
SCL
VSS
Figure 1. Logic Diagram
COMPATIBLE with I
2
C EXTENDED
ADDRESSING
TWO WIRE SERIAL INTERFACE,
SUPPORTS 400kHz PROTOCOL
1 MILLION ERASE/WRITE CYCLES, OVER
the FULL SUPPLY VOLTAGE RANGE
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE
– 4.5V to 5.5V for ST24E16 version
– 2.5V to 5.5V for ST25E16 version
WRITE CONTROL FEATURE
BYTE and PAGE WRITE (up to 16 BYTES)
BYTE, RANDOM and SEQUENTIAL READ
MODES
SELF TIMED PROGRAMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP
PERFORMANCES
DESCRIPTION
The ST24/25E16 are 16 Kbit electrically erasable
programmable memories (EEPROM), organized
as 8 blocks of 256 x8 bits. It is manufactured in
STMicroelectronics’s Hi-Endurance Advanced
CMOS technology which guarantees an endur-
ance of one million erase/write cycles over the full
supply voltage range, and a data retention of over
40 years. The ST25E16 operates with a power
supply value as low as 2.5V.
E0 - E2
Chip Enable Inputs
SDA
Serial Data Address Input/Output
SCL
Serial Clock
WC
Write Control
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
8
1
SO8 (M)
150mil Width
8
1
PSDIP8 (B)
0.25mm Frame
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