
B24C04/607
Complete data available on
DATA-on-DISC CD-ROM
or at
www.st.com
1/2
ST24C04, ST25C04
ST24W04, ST25W04
SERIAL 4K (512 x 8) EEPROM
DATA BRIEFING
1 MILLION ERASE/WRITE CYCLES with
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE:
– 3V to 5.5V for ST24x04 versions
– 2.5V to 5.5V for ST25x04 versions
– 1.8V to 5.5V for ST24C04R version only
HARDWARE WRITE CONTROL VERSIONS:
ST24W04 and ST25W04
PROGRAMMABLE WRITE PROTECTION
TWO WIRE SERIAL INTERFACE, FULLY I
2
C
BUS COMPATIBLE
BYTE and MULTIBYTE WRITE (up to 4
BYTES)
PAGE WRITE (up to 8 BYTES)
BYTE, RANDOM and SEQUENTIAL READ
MODES
SELF TIMED PROGRAMMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP
PERFORMANCES
DESCRIPTION
This specification covers a range of 4K bits I
2
C bus
EEPROM products, the ST24/25C04, the
ST24C04R and the ST24/25W04. In the text, prod-
ucts are referred to as ST24/25x04, where "x" is:
"C" for Standard version and "W" for hardware
Write Control version.
The ST24/25x04 are 4K bit electrically erasable
programmable memories (EEPROM), organized
as 2 blocks of 256 x 8 bits. They are manufactured
in SGS-THOMSON’s Hi-Endurance Advanced
CMOS technology which guarantees an endur-
ance of one million erase/write cycles with a data
retention of 40 years. The memories operate with
a power supply value as low as 1.8V for the
ST24C04R only.
Both Plastic Dual-in-Line and Plastic Small Outline
packages are available.
AI00851D
2
E1-E2
SDA
VCC
ST24x04
ST25x04
St24C04R
MODE/WC*
SCL
VSS
PRE
Logic Diagram
8
1
SO8 (M)
150mil Width
8
1
PSDIP8 (B)
0.25mm Frame
Note:
WC signal is only available for ST24/25W04 products.