參數(shù)資料
型號(hào): ST223C08CHH3PBF
元件分類: 晶閘管
英文描述: 745 A, 800 V, SCR, TO-200AB
封裝: METAL CASE WITH CERAMIC INSULATOR, APUK-3
文件頁(yè)數(shù): 8/9頁(yè)
文件大?。?/td> 171K
代理商: ST223C08CHH3PBF
ST223C..C Series
8
www.irf.com
Bulletin I25174 rev. B 04/00
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E 1
1E 2
1E 3
1E 4
1 E 11 E 2
1 E 31 E 4
50 H z
400
2500
10 0
1000
1500
3000
20 0
500
P u lse B ase w id t h ( s)
P
e
a
k
O
n
-s
ta
te
C
u
rre
n
t(
A
)
Snub b er c ircu it
R
= 47 o hm s
C
= 0 .22 F
V
= 80 % V
s
D
DRM
ST223 C. .C Se ries
Tra p ezo id a l p ulse
T
= 40 °C
d i/d t = 1 00A /s
5000
C
tp
10000
1E 4
1 E 1
1 E2
1 E 3
1 E4
50 H z
400
2500
100
P u lse Ba se w id t h ( s)
10 00
1500
200
500
ST223C..C Series
Tra p e zoid a l p ulse
T
= 55 °C
d i/d t = 50A /s
C
Snub b e r circ uit
R
= 4 7 o hm s
C
= 0.22 F
V
= 8 0 % V
s
D
DRM
3000
tp
5000
10000
1E 1
1E 2
1E 3
1E 4
1E 1
1 E 2
1E 3
1 E 4
50 H z
400
2500
10 0
10 00
1500
3000
200
500
P u lse B ase w idt h ( s)
P
e
a
k
O
n
-s
ta
te
C
u
rre
n
t(
A
)
ST22 3C ..C Se rie s
Tra p e zoid a l p ulse
T
= 40°C
di/d t = 5 0A / s
C
Snu bbe r c irc uit
R
= 4 7 o hm s
C
= 0.22 F
V
= 80% V
s
D
DRM
5000
tp
10000
1E 4
1E 1
1 E 2
1 E 3
1 E 4
50 H z
400
2500
100
P u lse Ba se w id t h ( s)
1 000
1500
200
500
ST223 C. .C Se ries
Tra p ezo id a l p uls e
T
= 55 °C
d i/d t = 10 0A /s
C
Snubbe r circ uit
R
= 4 7 o hm s
C
= 0.2 2 F
V
= 80% V
s
D
DRM
3 000
tp
5000
10 00 0
1E 1
1E 2
1E 3
1E 4
1E 5
1E 1
1 E 2
1E 3
1 E 4
P u lse B a se w idt h ( s)
2 0 jo ules per puls e
2
1
0.5
0.3
0. 2
0.1
10
P
e
a
k
O
n
-s
ta
te
C
u
rr
e
n
t(
A
)
ST223 C ..C Se ries
Sinus o id a l p uls e
4
tp
1E 4 1E 1
1 E 2
1 E 3
1 E 4
P u lse B ase w id t h ( s)
20 jo ule s p er p ulse
2
1
0.5
0. 3
0. 2
0.1
ST22 3C. .C Se ries
Re cta ngula r p uls e
di/d t = 5 0A/s
10
5
tp
1E 1
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