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參數(shù)資料
| 型號(hào)： | ST223C08CFN2L |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 745 A, 800 V, SCR, TO-200AB |
| 封裝： | ROHS COMPLIANT, METAL, APUK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 210K |
| 代理商： | ST223C08CFN2L |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93672
2
Revision: 14-May-08
ST223C..C Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
CURRENT CARRYING CAPABILITY
FREQUENCY
UNITS
50 Hz
930
800
1430
1220
5870
5240
A
400 Hz
910
770
1490
1300
3120
2740
1000 Hz
780
650
1430
1260
1880
1640
2500 Hz
490
400
1070
920
1000
860
Recovery voltage Vr
50
V
Voltage before turn-on Vd
VDRM
Rise of on-state current dI/dt
50
-
A/s
Heatsink temperature
40
55
40
55
40
55
°C
Equivalent values for RC circuit
47/0.22
Ω/F
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at heatsink temperature
IT(AV)
180° conduction, half sine wave
Double side (single side) cooled
390 (150)
A
55 (85)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
745
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5850
t = 8.3 ms
6130
t = 10 ms
100 % VRRM
reapplied
4920
t = 8.3 ms
5150
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
171
kA2s
t = 8.3 ms
156
t = 10 ms
100 % VRRM
reapplied
121
t = 8.3 ms
110
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
1710
kA2
√s
Maximum peak on-state voltage
VTM
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
1.58
V
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
1.05
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
1.09
Low level value of forward slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.88
m
Ω
High level value of forward slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.82
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
MIN.
MAX.
Maximum non-repetitive rate
of rise of turned on current
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
A/s
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s
Resistive load, gate pulse: 10 V, 5
Ω source
0.78
s
Maximum turn-off time
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/s
VR = 50 V, tp = 500 s, dV/dt: See table in device code
10
30
180° el
I
TM
180° el
I
TM
100 s
I
TM
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