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參數(shù)資料
| 型號(hào)： | ST223C08CFL0 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | 745 A, 800 V, SCR, TO-200AB |
| 封裝： | ROHS COMPLIANT, METAL, APUK-3 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | ST223C08CFL0 |
Document Number: 93672
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 14-May-08
3
ST223C..C Series
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
Vishay High Power Products
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
500
V/s
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
TJ = TJ maximum, f = 50 Hz, d% = 50
60
W
Maximum average gate power
PG(AV)
10
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
10
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5
Maximum DC gate current required to trigger
IGT
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
200
mA
Maximum DC gate voltage required to trigger
VGT
3V
Maximum DC gate current not to trigger
IGD
TJ = TJ maximum, rated VDRM applied
20
mA
Maximum DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to heatsink
RthJ-hs
DC operation single side cooled
0.17
K/W
DC operation double side cooled
0.08
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
4900
(500)
N
(kg)
Approximate weight
50
g
Case style
See dimensions - link at the end of datasheet
TO-200AB (A-PUK)
ΔR
thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.017
0.011
TJ = TJ maximum
K/W
120°
0.019
90°
0.024
0.026
60°
0.035
0.036
0.037
30°
0.060
0.061
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST223C08CFL1L | 745 A, 800 V, SCR, TO-200AB |
| ST223C08CFL1 | 745 A, 800 V, SCR, TO-200AB |
| ST223C08CFL2L | 745 A, 800 V, SCR, TO-200AB |
| ST223C08CFL2 | 745 A, 800 V, SCR, TO-200AB |
| ST223C08CFL3L | 745 A, 800 V, SCR, TO-200AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST223C08CFN0 | 功能描述:SCR PHASE CONT 800V 390A A-PUK RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> SCR - 單個(gè) 系列:- 其它有關(guān)文件:X00619 View All Specifications 產(chǎn)品目錄繪圖:SCR TO-92 Package 標(biāo)準(zhǔn)包裝:1 系列:- SCR 型:靈敏柵極 電壓 - 斷路:600V 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:800mV 電壓 - 導(dǎo)通狀態(tài) (Vtm)（最大）:1.35V 電流 - 導(dǎo)通狀態(tài) (It (AV))（最大）:500mA 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:800mA 電流 - 柵極觸發(fā)電流 (Igt)（最大）:200µA 電流 - 維持(Ih):5mA 電流 - 斷開(kāi)狀態(tài)（最大）:1µA 電流 - 非重復(fù)電涌，50、60Hz (Itsm):9A，10A 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:通孔 封裝/外殼:TO-226-3、TO-92-3（TO-226AA）成形引線 供應(yīng)商設(shè)備封裝:TO-92-3 包裝:剪切帶 (CT) 產(chǎn)品目錄頁(yè)面:1554 (CN2011-ZH PDF) 其它名稱(chēng):497-9067-1 |
| ST223C08CHK0 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK0L | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK1 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK1L | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
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