
ST2100C..R Series
6
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Bulletin I25198 rev. B 02/00
Fig. 7 - Stored Charged
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
Rate Of Decay Of On-state Current - di/dt (A/μs)
T
Square Wave Pulse Duration (s)
T
t
Instantaneous Gate Current (A)
I
1000
10000
100000
0.1
1
10
100
T = 125
C
ST2100C..R Series
I = 2000A
Q
rr
I
T
d
I
d
t
I
R
E
C)
RM
t
T
t
p
3
m
s
0.0001
0.001
0.01
0.1
0.001
0.01
0.1
1
10
100
Steady State Value
R = 0.019 K/W
(Single Side Cooled)
R = 0.0095 K/W
(Double Side Cooled)
(DC Operation)
ST2100C..R Series
0.1
0.001
1
10
100
0.01
0.1
1
10
VGD
IGD
T
C
T
C
T
C
(1)
(2)
Frequency Limited by PG(AV)
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
(6) PGM =100W
Device: ST2100C..R Series
(3)
(4)
(5)
(6)