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參數(shù)資料
| 型號： | ST173S12PHH1 |
| 元件分類： | 晶閘管 |
| 英文描述： | 275 A, 1200 V, SCR, TO-209AB |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 132K |
| 代理商： | ST173S12PHH1 |
ST173S Series
9
Bulletin I25181 rev. C 12/96
www.irf.com
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
°C
Tj
=
1
2
5
°
C
Tj=
-40
°
C
(1)
(2)
Instantaneous Gate Current (A)
Ins
tant
a
n
e
o
u
sG
a
te
V
o
lt
ag
e
(
V
)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST173S Series
(4)
Frequency Limited by PG(AV)
Fig. 15 - Gate Characteristics
1E1
1E2
1E3
1E4
1E5
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 jo ules per pulse
2
1
0.5
0.2
0.1
P
e
ak
O
n
-s
ta
te
C
u
rre
n
t(
A
)
ST173S Series
Sinusoidal pulse
7.5
4
0.3
tp
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 joules per pulse
2
1
0.5
0.2
0.1
10
5
ST173S Series
Rectangular pulse
di/dt = 50A/s
tp
1E1
3
0.3
0.4
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