參數(shù)資料
型號(hào)： ST1230C14K2P
廠商： VISHAY INTERTECHNOLOGY INC
元件分類(lèi)： 晶閘管
英文描述： 3200 A, 1400 V, SCR
封裝： ROHS COMPLIANT, METAL, CASE A-24, K-PUK-2
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 99K
代理商： ST1230C14K2P
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94395
2
Revision: 11-Aug-08
ST1230C..KP Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 1745 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at heatsink temperature
IT(AV)
180° conduction, half sine wave
double side (single side) cooled
1745 (700)
A
55 (85)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
3200
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
33 500
t = 8.3 ms
35 100
t = 10 ms
100 % VRRM
reapplied
28 200
t = 8.3 ms
29 500
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
5615
kA2s
t = 8.3 ms
5126
t = 10 ms
100 % VRRM
reapplied
3971
t = 8.3 ms
3625
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
56 150
kA2
√s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.93
V
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
1.02
Low level value of on-state slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.17
m
Ω
High level value of on-state slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.16
Maximum on-state voltage
VTM
Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.62
V
Maximum holding current
IH
TJ = 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20
Ω, t
r ≤ 1 s
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
1000
A/s
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/s
Vd = 0.67 % VDRM, TJ = 25 °C
1.9
s
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s,
VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 Ω, tp = 500 s
200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/s
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
100
mA
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PDF描述
ST1230C14K3LP 3200 A, 1400 V, SCR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ST1230C14K3LP 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A
ST1230C14K3P 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A
ST1230C14KO 制造商:n/a 功能描述:SCR
ST1230C16K0 功能描述:SCR模塊 1600 Volt 1645 Amp RoHS:否 制造商:Vishay Semiconductors 開(kāi)啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開(kāi)啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK
ST1230C16K0L 功能描述:SCR模塊 1745 Amp 1600 Volt 3200 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開(kāi)啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開(kāi)啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK
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