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參數(shù)資料
| 型號(hào)： | ST1230C08K1LP |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 3200 A, 800 V, SCR |
| 封裝： | ROHS COMPLIANT, METAL, CASE A-24, K-PUK-2 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 99K |
| 代理商： | ST1230C08K1LP |
Document Number: 94395
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 11-Aug-08
3
ST1230C..KP Series
Phase Control Thyristors
(Hockey PUK Version), 1745 A
Vishay High Power Products
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
TJ = TJ maximum, tp ≤ 5 ms
16
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz, d% = 50
3
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
3.0
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5.0
DC gate current required to trigger
IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
-
mA
TJ = 25 °C
100
200
TJ = 125 °C
50
-
DC gate voltage required to trigger
VGT
TJ = - 40 °C
1.4
-
V
TJ = 25 °C
1.1
3.0
TJ = 125 °C
0.9
-
DC gate current not to trigger
IGD
TJ = TJ maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will not
trigger any unit with rated VDRM
anode to cathode applied
10
mA
DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.042
K/W
DC operation double side cooled
0.021
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation single side cooled
0.006
DC operation double side cooled
0.003
Mounting force, ± 10 %
24 500
(2500)
N
(kg)
Approximate weight
425
g
Case style
See dimensions - link at the end of datasheet
A-24 (K-PUK)
ΔR
thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.003
0.002
TJ = TJ maximum
K/W
120°
0.004
90°
0.005
60°
0.007
30°
0.012
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST1230C08K1P | 3200 A, 800 V, SCR |
| ST1230C08K2LP | 3200 A, 800 V, SCR |
| ST1230C08K2P | 3200 A, 800 V, SCR |
| ST1230C08K3LP | 3200 A, 800 V, SCR |
| ST1230C08K3P | 3200 A, 800 V, SCR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST1230C08K1P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C08K2LP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C08K2P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C08K3LP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C08K3P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
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