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參數(shù)資料
| 型號： | ST1200C20K3 |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | ST1200C20K3 |
ST1200C..K Series
3
Bulletin I25196 rev.B 01/00
www.irf.com
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80%
V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25
°
C
I
TM
= 550A, T
J
= T
J
max, di/dt
= 40A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
Parameter
ST1200C..K
Units Conditions
Switching
1000
A/μs
t
d
Typical delay time
1.9
t
q
Typical turn-off time
200
μs
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
I
DRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/μs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST1200C..K
Units Conditions
100
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
Maximum average gate power
I
GM
+V
GM
Maximum peak positive
gate voltage
Maximum peak gate power
16
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
3
Max. peak positive gate current
3.0
A
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 125
°
C
mA
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST1200C..K
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
1.4
-
1.1
3.0
0.9
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
≤
5ms
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