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參數(shù)資料
| 型號： | ST110S16P2VPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 175 A, 1600 V, SCR, TO-209AC |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-94, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 161K |
| 代理商： | ST110S16P2VPBF |
Document Number: 94393
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 17-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Vishay Semiconductors
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
R
=
0.1
K/
W
-
D
e
lta
R
th
SA
0.2
K/
W
0.3
K/
W
0.4
K/
W
0.6
K/ W
0.8
K/ W
1 K/ W
0.5
K/ W
1.2 K/
W
0
20
40
60
80
100
120
140
160
180
200
220
0
20
40
60
80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum
Average
On-state
Power
Loss
(W)
Average On-state Current (A)
ST110S Series
T = 125°C
J
1000
1200
1400
1600
1800
2000
2200
2400
110
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
On-state
Current
(A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
ST110S Series
J
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0.01
0.1
1
10
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak
Half
Sine
Wave
On-state
Current
(A)
Initial T = 125°C
No Voltage Reapplied
Rated V
Reapplied
J
RRM
ST110S Series
Instantaneous On-state Voltage (V)
Instantaneous
On-state
Current
(A)
10
100
1000
10000
0.5
1.5
2.5
3.5
4.5
Tj = 25C
Tj = 125C
ST110S Series
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|---|---|
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