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參數(shù)資料
| 型號： | ST110S12P |
| 英文描述： | 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 75K |
| 代理商： | ST110S12P |
ST110S Series
3
www.irf.com
Bulletin I25167 rev. B 01/94
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
I
DRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/μs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST110S
Units Conditions
20
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
T
J
T
stg
R
thJC
Max. operating temperature range
-40 to 125
Max. storage temperature range
-40 to 150
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, ± 10%
15.5
Non lubricated threads
(137)
14
Lubricated threads
(120)
wt
Approximate weight
130
g
Parameter
ST110S
Units
Conditions
0.195
DC operation
0.08
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
P
GM
P
G(AV)
Maximum average gate power
I
GM
+V
GM
Maximum peak positive
gate voltage
Maximum peak gate power
5
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
1
Max. peak positive gate current
2.0
A
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
to trigger
mA
V
GT
DC gate voltage required
to trigger
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST110S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
-
90
40
150
-
2.9
-
1.8
1.2
3.0
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
°C
K/W
Nm
(lbf-in)
Case style
TO - 209AC (TO-94)
See Outline Table
V
T
J
= T
J
max, t
p
≤
5ms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST110S12P0 | 制造商:n/a 功能描述:_ |
| ST110S12P0LPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P0PBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P0V | 功能描述:SCR 1200 Volt 110 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| ST110S12P0VL | 制造商:n/a 功能描述:Power SCR |
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