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參數(shù)資料
| 型號： | ST1000EX21 |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 2.5KV V(BR)CES | 1KA I(C) | TO-200VAR108 |
| 中文描述： | 晶體管| IGBT的|正陳| 2.5kV的五（巴西）國際消費電子展| 1KA一（c）|至200VAR108 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 94K |
| 代理商： | ST1000EX21 |
ST1000C..K Series
2
Bulletin I25202 rev. A 01/00
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
RRM
, maximum repetitive
peak reverse voltage
V
V
RSM
, maximum non-
repetitive peak rev. voltage
V
I
RRM
max.
@ T
J
= 125
°
C
mA
Type number
12
1200
1300
16
1600
1700
20
2000
2100
22
2200
2300
24
2400
2500
26
2600
2700
ST1000C..K
100
I
T(AV)
Maximum average on-state current
@ Heatsink temperature
1473 (630)
55 (85)
A
°
C
180
°
conduction, half sine wave
Double side (single side) cooled
I
T(RMS)
I
TSM
Maximum RMS on-state current
6540
A
DC @ 25
°
C heatsink temp. double side cooled
Maximum peak, one-cycle,
20.0
KA
t = 10ms
No voltage
non-repetitive surge current
21.2
t = 8.3ms
reapplied
17.0
t = 10ms
100% V
RRM
reapplied
18.1
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
2000
KA
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
1865
t = 8.3ms
reapplied
1445
t = 10ms
100% V
RRM
reapplied
1360
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
20000
KA
2
√
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
0.950
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
I
pk
= 3000A, T
J
= 125
°
C, t
p
= 10ms sine pulse
T
J
= 25
°
C, anode supply 12V resistive load
V
T(TO)2
High level value of threshold voltage
1.024
r
t1
Low level value of on-state slope resistance
0.283
m
r
t2
V
TM
I
H
High level value of on-state slope resistance
0.265
Maximum on-state voltage drop
1.80
V
Maximum holding current
600
mA
I
L
Typical latching current
1000
Parameter
ST1000C..K
Units Conditions
On-state Conduction
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