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參數(shù)資料
| 型號(hào)： | SSW5N90A |
| 英文描述： | MCU EMULATOR POD FOR 8-DIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 900V五（巴西）直| 5A條（?。﹟對(duì)263AB |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 633K |
| 代理商： | SSW5N90A |
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
Ο
C
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
Ο
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=900V
V
DS
=720V,T
C
=125
Ο
C
V
GS
=10V,I
D
=2.5A
*
V
DS
=50V,I
D
=2.5A
V
DD
=450V,I
D
=5A,
R
G
=13.6
See Fig 13
V
DS
=720V,V
GS
=10V,
I
D
=5A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
T
J
=25
di
F
/dt=100A/
μ
s
Ο
C
,I
S
=5A,V
GS
=0V
Ο
C
,I
F
=5A
O
4
O
4
O
5
O
5
O
4
O
4
O
4
O
4
O
1
SSW/I5N90A
900
--
2.0
--
--
--
--
--
1.14
--
--
--
--
--
105
43
21
39
94
32
54
9.0
25.0
--
--
3.5
100
-100
25
250
2.9
--
1440
125
50
50
90
200
75
70
--
--
4.0
1110
--
--
--
540
5.62
5
20
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=40mH, I
AS
=5A, V
DD
=50V, R
G
=27
, Starting T
J
=25
I
SD
5A, di/dt 120A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
Ο
C
Ο
C
O
1
O
O
3
O
2
4
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