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參數(shù)資料
| 型號(hào)： | SSW5N80A |
| 英文描述： | KIT WUSB LP KEYBRD/MOUSE REF DES |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 5A條（?。﹟對(duì)263AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 231K |
| 代理商： | SSW5N80A |
SSW/I5N60A
600
--
2.0
--
--
--
--
--
0.66
--
--
--
--
--
--
4.0
100
-100
25
250
2.2
--
810
105
40
40
50
120
60
40
--
--
3.72
625
70
28
15
17
52
24
31
4.1
15.4
--
--
--
360
2.39
4.5
18
1.4
--
--
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=30mH, I
AS
=4.5A, V
DD
=50V, R
G
=25
, Starting T
J
=25
℃
③
I
SD
≤
4.5A, di/dt
≤
100A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
℃
④
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
≤
2%
⑤
Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
Δ
BV/
Δ
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(
＂
Miller
＂
) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
℃
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=600V
V
DS
=480V,T
C
=125
℃
V
GS
=10V,I
D
=2.25A
④
V
DS
=50V,I
D
=2.25A
④
V
DD
=300V,I
D
=4.5A,
R
G
=11
See Fig 13
④ ⑤
V
DS
=480V,V
GS
=10V,
I
D
=4.5A
See Fig 6 & Fig 12
④ ⑤
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
①
Diode Forward Voltage
④
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
℃
,I
S
=4.5A,V
GS
=0V
T
J
=25
℃
,I
F
=4.5A
di
F
/dt=100A/
μ
s
④
S
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