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參數(shù)資料
| 型號： | SSW3N80A |
| 英文描述： | KIT DEVELOPMENT ENCORE II |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 3A條（?。﹟對263AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 663K |
| 代理商： | SSW3N80A |
Advanced Power MOSFET
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
800
3
1.9
12
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
Ο
C
A
Ο
C
*
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 800V
Low R
DS(ON)
: 3.800
(Typ.)
O
1
O
3
O
O
1
2
O
1
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
Ο
C
/W
Characteristic
Max.
1.25
40
62.5
Units
Symbol
Typ.
--
--
--
SSW/I3N80A
BV
DSS
= 800 V
R
DS(on)
= 4.8
I
D
= 3 A
240
3
10
2.0
3.1
100
0.8
- 55 to +150
300
30
1999 Fairchild Semiconductor Corporation
Rev. B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSW3N90A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-263AB |
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| SSW408 | 制造商:STANFORD 制造商全稱:STANFORD 功能描述:DC-4 GHz High Power GaAs MMIC SPDT Switch |
| SSW-408 | 制造商:STANFORD 制造商全稱:STANFORD 功能描述:DC-4 GHz High Power GaAs MMIC SPDT Switch |
| SSW-424 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SPDT RF Absorptive Switch |
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