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參數(shù)資料
| 型號(hào)： | SSR30C100S1S |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 30 A, 1000 V, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | SMD1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | SSR30C100S1S |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0043C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SSR30C __
__ __
│
└ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package
S1 = SMD1
└ Voltage
100 = 1000 V
120 = 1200 V
SSR30C100S1
&
SSR30C120S1
30 A / 1200 V
Schottky Silicon Carbide
Rectifier
FEATURES:
1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current 30 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over
Temperature
Small Package Size
TX, TXV, and Space Level Screening
Available.
2/ Consult Factory.
MAXIMUM RATINGS 3/
Symbol
Value
Units
Peak Repetitive and Peak Reverse Voltage
SSR30C100S1
SSR30C120S1
VRRM
VR
1000
1200
Volts
Average Rectified Forward Current
4/
(Resistive Load, 60 Hz, Sine Wave)
Total
IO
30
Amps
Peak Surge Current
4/
(8.3 ms Pulse, Half Sine Wave, TA = 25
oC)
Total
IFSM
180
Amps
Operating & Storage Temperature
TOP & Tstg
-55 to +250
oC
Junction Temperature
TJ
-55 to +250
oC
Maximum Thermal Resistance
4/
(Junction to Case)
Total
RθJC
0.8
oC/W
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.
SMD1
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