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參數(shù)資料
| 型號(hào)： | SSP7N60B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 7 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 915K |
| 代理商： | SSP7N60B |
2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
S
25
50
75
100
125
150
0
2
4
6
8
I
D
,
T
C
, Case Temperature [
℃
]
10
0
10
V
DS
, Drain-Source Voltage [V]
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
= 10 V
2. I
D
= 3.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9-1. Maximum Safe Operating Area
for SSP7N60B
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
10
0
10
V
DS
, Drain-Source Voltage [V]
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
Figure 9-2. Maximum Safe Operating Area
for SSS7N60B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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