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參數資料
| 型號： | SSP5N90 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進的功率MOSFET |
| 文件頁數： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | SSP5N90 |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 900V
Low R
DS(ON)
: 2.300
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
Ο
C
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
900
5
3.2
20
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
A
Ο
C
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
1
O
1
O
3
O
2
SSP5N90A
BV
DSS
= 900 V
R
DS(on)
= 2.9
I
D
= 5 A
529
5
14
1.5
140
1.12
- 55 to +150
300
0.89
--
62.5
--
0.5
--
1999 Fairchild Semiconductor Corporation
Rev. B
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PDF描述 |
|---|---|
| SSP5N90A | Advanced Power MOSFET |
| SSP6N70A | Advanced Power MOSFET |
| SSP6N80A | Advanced Power MOSFET |
| SSP6N90A | Advanced Power MOSFET |
| SSP70N10A | N-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SSP5N90A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| SSP60N05 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N CHANNEL POWER MOSFETS |
| SSP60N06 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N CHANNEL POWER MOSFETS |
| SSP-61 | 制造商:Sunhayato 功能描述: 制造商:Sunhayato 功能描述:SSP-61 |
| SSP-62 | 制造商:Sunhayato 功能描述:0.65mmsb`@Max80s 2.54mmsb` 50.17~84.55~t1.0mm bL AKXG|LV/F1.0mm |
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