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參數(shù)資料
| 型號(hào)： | SSM9926M |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL N CHANNEL ENHANCEMENT MODE POWER MOSFETS |
| 中文描述： | 雙N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 109K |
| 代理商： | SSM9926M |
www.SiliconStandard.com 1 of 6
SSM9926M
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface-mount package
BV
DSS
R
DS(ON)
I
D
20V
30m
6A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@
T
A
=25
°C
I
D
@
T
A
=70
°C
I
DM
P
D
@
T
A
=25
°C
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
W/
°C
T
STG
T
J
Symbol
Value
62.5
Unit
°C
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
2
W
0.016
-55 to 150
°C
-55 to 150
°C
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1,4
4.8
A
20
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
6
A
Parameter
Rating
20
Drain-Source Voltage
Power MOSFETs from
Silicon Standard
provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
±
8
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
Rev.2.01 6/26/2003
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