參數(shù)資料
型號： SSM6P09FU
廠商： Toshiba Corporation
英文描述： High Speed Switching Applications
中文描述： 高速開關(guān)應用
文件頁數(shù)： 1/5頁
文件大?。?/td> 146K
代理商： SSM6P09FU
SSM6P09FU
2003-02-19
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P09FU
High Speed Switching Applications
Small package
Low Drain-Source ON resistance.
: R
on
= 2.7
(max) (@V
GS
=
1
0 V)
: R
on
= 4.2
(max) (@V
GS
=
4 V)
Maximum Ratings
(Ta 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
200
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta 25°C)
P
D
(Note1)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note1: Total rating, mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
相關(guān)PDF資料
PDF描述
SSM6P15FE High Speed Switching Applications
SSM6P15FU Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
SSM6P16FE Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
SSM6P16FU High Speed Switching Applications
SSM6P25TU Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
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